Shock-induced plastic deformation processes and melting in a metallic glass are examined using atomic-level simulation. Only the most unstable atomic clusters serve as centers for shear transformations at low shock intensities, while all cluster types are able to serve at high shock intensities.

Electrically active deep levels, arising by implantation, harm the functionality of electronic devices. The authors found that Mg implantation in n-GaN generates nine electrically active levels in the 0.2-1.2 eV energy range. Most of these traps are stable up to at least 1000°C.